Structural and optical high-pressure study of spinel-type MnIn2S4
Identifieur interne : 007061 ( Main/Repository ); précédent : 007060; suivant : 007062Structural and optical high-pressure study of spinel-type MnIn2S4
Auteurs : RBID : Pascal:07-0078554Descripteurs français
- Pascal (Inist)
English descriptors
- KwdEn :
Abstract
We report a combined study of the structural and electronic properties of the spinel-type semiconductor Mnln2S4 under high pressures by means of X-ray diffraction (ADXRD), X-ray absorption (XAS), and optical absorption measurements. The three techniques evidence a reversible structural phase transition near 7 GPa, that according to ADXRD measurements is to a double-NaCl structure. XAS measurements evidence predominant tetrahedral coordination for Mn in the spinel phase that does not noticeably change with increasing pressure up to the phase transition. XAS measurements indicate that the static disorder increases considerably when the sample reverts from the double-NaCl phase to the spinel phase. Optical absorption measurements show that the direct gap of MnIn2S4 exhibits a nonlinear behaviour with a positive pressure coefficient at pressures below 2.5 GPa and a negative pressure coefficient between 2.5 and 7 GPa. The pressure behavior of the bandgap seems to be affected by the defect concentration. The double-NaCI phase also exhibits a bandgap with a negative pressure coefficient.
Links toward previous steps (curation, corpus...)
- to stream Main, to step Corpus: 008257
Links to Exploration step
Pascal:07-0078554Le document en format XML
<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Structural and optical high-pressure study of spinel-type MnIn<sub>2</sub>S<sub>4</sub></title><author><name sortKey="Manjon, F J" uniqKey="Manjon F">F. J. Manjon</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Dpto. de Física Aplicada, Univ. Politècnica de València, Cno. de Vera s/n</s1><s2>46022 València</s2><s3>ESP</s3><sZ>1 aut.</sZ></inist:fA14><country>Espagne</country><placeName><region nuts="2" type="communauté">Communauté valencienne</region></placeName></affiliation></author><author><name sortKey="Segura, A" uniqKey="Segura A">A. Segura</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Dpto. de Ffsica Aplicada-ICMUV, Univ. de València, c/Dr. Moliner 50</s1><s2>46100 Burjassot</s2><s3>ESP</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Espagne</country><placeName><region nuts="2" type="communauté">Communauté valencienne</region></placeName></affiliation></author><author><name sortKey="Amboage, M" uniqKey="Amboage M">M. Amboage</name><affiliation wicri:level="3"><inist:fA14 i1="03"><s1>European Synchrotron Radiation Facility, BP 220</s1><s2>38043 Grenoble</s2><s3>FRA</s3><sZ>3 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Rhône-Alpes</region><settlement type="city">Grenoble</settlement></placeName></affiliation></author><author><name sortKey="Pellicer Porres, J" uniqKey="Pellicer Porres J">J. Pellicer-Porres</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Dpto. de Ffsica Aplicada-ICMUV, Univ. de València, c/Dr. Moliner 50</s1><s2>46100 Burjassot</s2><s3>ESP</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Espagne</country><placeName><region nuts="2" type="communauté">Communauté valencienne</region></placeName></affiliation></author><author><name sortKey="Sanchez Royo, J F" uniqKey="Sanchez Royo J">J. F. Sanchez-Royo</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Dpto. de Ffsica Aplicada-ICMUV, Univ. de València, c/Dr. Moliner 50</s1><s2>46100 Burjassot</s2><s3>ESP</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>Espagne</country><placeName><region nuts="2" type="communauté">Communauté valencienne</region></placeName></affiliation></author><author><name sortKey="Itie, J P" uniqKey="Itie J">J. P. Itie</name><affiliation wicri:level="3"><inist:fA14 i1="04"><s1>Synchrotron SOLEIL, L'Onne des Merisiers, Saint-Aubin -BP 48</s1><s2>91192 Gif-sur-Yvette</s2><s3>FRA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Gif-sur-Yvette</settlement></placeName></affiliation></author><author><name sortKey="Flank, A M" uniqKey="Flank A">A. M. Flank</name><affiliation wicri:level="3"><inist:fA14 i1="04"><s1>Synchrotron SOLEIL, L'Onne des Merisiers, Saint-Aubin -BP 48</s1><s2>91192 Gif-sur-Yvette</s2><s3>FRA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Gif-sur-Yvette</settlement></placeName></affiliation></author><author><name sortKey="Lagarde, P" uniqKey="Lagarde P">P. Lagarde</name><affiliation wicri:level="3"><inist:fA14 i1="04"><s1>Synchrotron SOLEIL, L'Onne des Merisiers, Saint-Aubin -BP 48</s1><s2>91192 Gif-sur-Yvette</s2><s3>FRA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Gif-sur-Yvette</settlement></placeName></affiliation></author><author><name sortKey="Polian, A" uniqKey="Polian A">A. Polian</name><affiliation wicri:level="3"><inist:fA14 i1="05"><s1>Physique des Milieux Denses, IMPMC, Universite P. et M. Curie, 140 Bvd de Lourmel</s1><s2>75015 Paris</s2><s3>FRA</s3><sZ>9 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Île-de-France</region><settlement type="city">Paris</settlement></placeName></affiliation></author><author><name sortKey="Ursaki, V V" uniqKey="Ursaki V">V. V. Ursaki</name><affiliation wicri:level="1"><inist:fA14 i1="06"><s1>Institute of Applied Physics, Academy of Sciences of Moldova</s1><s2>2028 Chisinau</s2><s3>MDA</s3><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Moldavie</country><wicri:noRegion>2028 Chisinau</wicri:noRegion></affiliation></author><author><name sortKey="Tiginyanu, I M" uniqKey="Tiginyanu I">I. M. Tiginyanu</name><affiliation wicri:level="1"><inist:fA14 i1="06"><s1>Institute of Applied Physics, Academy of Sciences of Moldova</s1><s2>2028 Chisinau</s2><s3>MDA</s3><sZ>10 aut.</sZ><sZ>11 aut.</sZ></inist:fA14><country>Moldavie</country><wicri:noRegion>2028 Chisinau</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">07-0078554</idno><date when="2007">2007</date><idno type="stanalyst">PASCAL 07-0078554 INIST</idno><idno type="RBID">Pascal:07-0078554</idno><idno type="wicri:Area/Main/Corpus">008257</idno><idno type="wicri:Area/Main/Repository">007061</idno></publicationStmt><seriesStmt><idno type="ISSN">0370-1972</idno><title level="j" type="abbreviated">Phys. status solidi, B, Basic res.</title><title level="j" type="main">Physica status solidi. B. Basic research</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term><term>Defect density</term><term>Electronic structure</term><term>Energy gap</term><term>High pressure</term><term>Indium sulfides</term><term>Manganese sulfides</term><term>NaCl structure</term><term>Phase transformations</term><term>Pressure effects</term><term>Semiconductor materials</term><term>Spinels</term><term>X-ray absorption spectra</term><term>XRD</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Haute pression</term><term>Structure électronique</term><term>Diffraction RX</term><term>Spectre absorption RX</term><term>Spectre absorption</term><term>Transformation phase</term><term>Effet pression</term><term>Bande interdite</term><term>Densité défaut</term><term>Structure NaCl</term><term>Spinelles</term><term>Semiconducteur</term><term>Manganèse sulfure</term><term>Indium sulfure</term><term>6470K</term><term>7820</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report a combined study of the structural and electronic properties of the spinel-type semiconductor Mnln<sub>2</sub>S<sub>4</sub> under high pressures by means of X-ray diffraction (ADXRD), X-ray absorption (XAS), and optical absorption measurements. The three techniques evidence a reversible structural phase transition near 7 GPa, that according to ADXRD measurements is to a double-NaCl structure. XAS measurements evidence predominant tetrahedral coordination for Mn in the spinel phase that does not noticeably change with increasing pressure up to the phase transition. XAS measurements indicate that the static disorder increases considerably when the sample reverts from the double-NaCl phase to the spinel phase. Optical absorption measurements show that the direct gap of MnIn<sub>2</sub>S<sub>4</sub> exhibits a nonlinear behaviour with a positive pressure coefficient at pressures below 2.5 GPa and a negative pressure coefficient between 2.5 and 7 GPa. The pressure behavior of the bandgap seems to be affected by the defect concentration. The double-NaCI phase also exhibits a bandgap with a negative pressure coefficient.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0370-1972</s0></fA01><fA02 i1="01"><s0>PSSBBD</s0></fA02><fA03 i2="1"><s0>Phys. status solidi, B, Basic res.</s0></fA03><fA05><s2>244</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Structural and optical high-pressure study of spinel-type MnIn<sub>2</sub>S<sub>4</sub></s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Papers presented at the Twelfth International Conference on High Pressure Semiconductor Physics (HPSP-12), Barcelona, Spain, 31 July-3 August 2006</s1></fA09><fA11 i1="01" i2="1"><s1>MANJON (F. J.)</s1></fA11><fA11 i1="02" i2="1"><s1>SEGURA (A.)</s1></fA11><fA11 i1="03" i2="1"><s1>AMBOAGE (M.)</s1></fA11><fA11 i1="04" i2="1"><s1>PELLICER-PORRES (J.)</s1></fA11><fA11 i1="05" i2="1"><s1>SANCHEZ-ROYO (J. F.)</s1></fA11><fA11 i1="06" i2="1"><s1>ITIE (J. P.)</s1></fA11><fA11 i1="07" i2="1"><s1>FLANK (A. M.)</s1></fA11><fA11 i1="08" i2="1"><s1>LAGARDE (P.)</s1></fA11><fA11 i1="09" i2="1"><s1>POLIAN (A.)</s1></fA11><fA11 i1="10" i2="1"><s1>URSAKI (V. V.)</s1></fA11><fA11 i1="11" i2="1"><s1>TIGINYANU (I. M.)</s1></fA11><fA12 i1="01" i2="1"><s1>CHRISTENSEN (Niels E.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>MUNOZ (Alfonso)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Dpto. de Física Aplicada, Univ. Politècnica de València, Cno. de Vera s/n</s1><s2>46022 València</s2><s3>ESP</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Dpto. de Ffsica Aplicada-ICMUV, Univ. de València, c/Dr. Moliner 50</s1><s2>46100 Burjassot</s2><s3>ESP</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>European Synchrotron Radiation Facility, BP 220</s1><s2>38043 Grenoble</s2><s3>FRA</s3><sZ>3 aut.</sZ></fA14><fA14 i1="04"><s1>Synchrotron SOLEIL, L'Onne des Merisiers, Saint-Aubin -BP 48</s1><s2>91192 Gif-sur-Yvette</s2><s3>FRA</s3><sZ>6 aut.</sZ><sZ>7 aut.</sZ><sZ>8 aut.</sZ></fA14><fA14 i1="05"><s1>Physique des Milieux Denses, IMPMC, Universite P. et M. Curie, 140 Bvd de Lourmel</s1><s2>75015 Paris</s2><s3>FRA</s3><sZ>9 aut.</sZ></fA14><fA14 i1="06"><s1>Institute of Applied Physics, Academy of Sciences of Moldova</s1><s2>2028 Chisinau</s2><s3>MDA</s3><sZ>10 aut.</sZ><sZ>11 aut.</sZ></fA14><fA15 i1="01"><s1>Department of Physics and Astronomy, University of Aarhus</s1><s2>8000 Aarhus</s2><s3>DNK</s3><sZ>1 aut.</sZ></fA15><fA20><s1>229-233</s1></fA20><fA21><s1>2007</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>10183B</s2><s5>354000159622370380</s5></fA43><fA44><s0>0000</s0><s1>© 2007 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>13 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>07-0078554</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Physica status solidi. B. Basic research</s0></fA64><fA66 i1="01"><s0>DEU</s0></fA66><fC01 i1="01" l="ENG"><s0>We report a combined study of the structural and electronic properties of the spinel-type semiconductor Mnln<sub>2</sub>S<sub>4</sub> under high pressures by means of X-ray diffraction (ADXRD), X-ray absorption (XAS), and optical absorption measurements. The three techniques evidence a reversible structural phase transition near 7 GPa, that according to ADXRD measurements is to a double-NaCl structure. XAS measurements evidence predominant tetrahedral coordination for Mn in the spinel phase that does not noticeably change with increasing pressure up to the phase transition. XAS measurements indicate that the static disorder increases considerably when the sample reverts from the double-NaCl phase to the spinel phase. Optical absorption measurements show that the direct gap of MnIn<sub>2</sub>S<sub>4</sub> exhibits a nonlinear behaviour with a positive pressure coefficient at pressures below 2.5 GPa and a negative pressure coefficient between 2.5 and 7 GPa. The pressure behavior of the bandgap seems to be affected by the defect concentration. The double-NaCI phase also exhibits a bandgap with a negative pressure coefficient.</s0></fC01><fC02 i1="01" i2="3"><s0>001B60D70K</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H20</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Haute pression</s0><s5>02</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>High pressure</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Structure électronique</s0><s5>03</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Electronic structure</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>04</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>XRD</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Spectre absorption RX</s0><s5>05</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>X-ray absorption spectra</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Spectre absorption</s0><s5>06</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Absorption spectra</s0><s5>06</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Transformation phase</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Phase transformations</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Effet pression</s0><s5>08</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Pressure effects</s0><s5>08</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Bande interdite</s0><s5>09</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Energy gap</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Densité défaut</s0><s5>11</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Defect density</s0><s5>11</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Densidad defecto</s0><s5>11</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Structure NaCl</s0><s5>12</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>NaCl structure</s0><s5>12</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Estructura NaCl</s0><s5>12</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Spinelles</s0><s5>15</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Spinels</s0><s5>15</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Semiconducteur</s0><s5>16</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Semiconductor materials</s0><s5>16</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Manganèse sulfure</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Manganese sulfides</s0><s2>NK</s2><s5>17</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Indium sulfure</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Indium sulfides</s0><s2>NK</s2><s5>18</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>6470K</s0><s4>INC</s4><s5>60</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>7820</s0><s4>INC</s4><s5>61</s5></fC03><fN21><s1>050</s1></fN21></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>HPSP-12 International Conference on High Pressure Semiconductor Physics</s1><s2>12</s2><s3>Barcelona ESP</s3><s4>2006-07-31</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
EXPLOR_STEP=IndiumV3/Data/Main/Repository
HfdSelect -h $EXPLOR_STEP/biblio.hfd -nk 007061 | SxmlIndent | more
Ou
HfdSelect -h $EXPLOR_AREA/Data/Main/Repository/biblio.hfd -nk 007061 | SxmlIndent | more
Pour mettre un lien sur cette page dans le réseau Wicri
{{Explor lien
|wiki= *** parameter Area/wikiCode missing ***
|area= IndiumV3
|flux= Main
|étape= Repository
|type= RBID
|clé= Pascal:07-0078554
|texte= Structural and optical high-pressure study of spinel-type MnIn2S4
}}
| This area was generated with Dilib version V0.5.77. |  |